? semiconductor components industries, llc, 2012 february, 2012 ? rev. 12 1 publication order number: nud3124/d nud3124, SZNUD3124 automotive inductive load driver this micro ? integrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small dc motors without the need of a free ? wheeling diode. it accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. features ? provides robust interface between d.c. relay coils and sensitive logic ? capable of driving relay coils rated up to 150 ma at 12 volts ? replaces 3 or 4 discrete components for lower cost ? internal zener eliminates need for free ? wheeling diode ? meets load dump and other automotive specs ? sz prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these are pb ? free devices typical applications ? automotive and industrial environment ? drives window, latch, door, and antenna relays benefits ? reduced pcb space ? standardized driver for wide range of relays ? simplifies circuit design and pcb layout ? compliance with automotive specifications gate (1) 10 k 100 k drain (3) source (2) internal circuit diagrams gate (2) 10 k 100 k drain (6) source (1) gate (5) drain (3) source (4) 10 k 100 k case 318 case 318f http://onsemi.com marking diagrams sot ? 23 case 318 style 21 jw6 m jw6 = specific device code m = date code = pb ? free package (note: microdot may be in either location) sc ? 74 case 318f style 7 jw6 = specific device code m = date code = pb ? free package (note: microdot may be in either location) jw6 m 1 2 3 1 6 device package shipping ? ordering information nud3124lt1g sot ? 23 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. nud3124dmt1g sc ? 74 (pb ? free) 3000 / tape & reel SZNUD3124lt1g sot ? 23 (pb ? free) 3000 / tape & reel SZNUD3124dmt1g sc ? 74 (pb ? free) 3000 / tape & reel
nud3124, SZNUD3124 http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise specified) symbol rating value unit v dss drain ? to ? source voltage ? continuous (t j = 125 c) 28 v v gss gate ? to ? source voltage ? continuous (t j = 125 c) 12 v i d drain current ? continuous (t j = 125 c) 150 ma e z single pulse drain ? to ? source avalanche energy (for relay?s coils/inductive loads of 80 or higher) (t j initial = 85 c) 250 mj p pk peak power dissipation, drain ? to ? source (notes 1 and 2) (t j initial = 85 c) 20 w e ld1 load dump suppressed pulse, drain ? to ? source (notes 3 and 4) (suppressed waveform: v s = 45 v, r source = 0.5 , t = 200 ms) (for relay?s coils/inductive loads of 80 or higher) (t j initial = 85 c) 80 v e ld2 inductive switching transient 1, drain ? to ? source (waveform: r source = 10 , t = 2.0 ms) (for relay?s coils/inductive loads of 80 or higher) (t j initial = 85 c) 100 v e ld3 inductive switching transient 2, drain ? to ? source (waveform: r source = 4.0 , t = 50 s) (for relay?s coils/inductive loads of 80 or higher) (t j initial = 85 c) 300 v rev ? bat reverse battery, 10 minutes (drain ? to ? source) (for relay?s coils/inductive loads of 80 or more) ? 14 v dual ? volt dual voltage jump start, 10 minutes (drain ? to ? source) 28 v esd human body model (hbm) according to eia/jesd22/a114 specification 2,000 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. nonrepetitive current square pulse 1.0 ms duration. 2. for different square pulse durations, see figure 2. 3. nonrepetitive load dump suppressed pulse per figure 3. 4. for relay?s coils/inductive loads higher than 80 , see figure 4.
nud3124, SZNUD3124 http://onsemi.com 3 thermal characteristics symbol rating value unit t a operating ambient temperature ? 40 to 125 c t j maximum junction temperature 150 c t stg storage temperature range ? 65 to 150 c p d total power dissipation (note 5) sot ? 23 derating above 25 c 225 1.8 mw mw/ c p d total power dissipation (note 5) sc ? 74 derating above 25 c 380 3.0 mw mw/ c r ja thermal resistance junction?to?ambient (note 5) sot ? 23 sc ? 74 556 329 c/w 5. mounted onto minimum pad board.
nud3124, SZNUD3124 http://onsemi.com 4 electrical characteristics (t j = 25 c unless otherwise specified) characteristic symbol min typ max unit off characteristics drain to source sustaining voltage (i d = 10 ma) v brdss 28 34 38 v drain to source leakage current (v ds = 12 v, v gs = 0 v) (v ds = 12 v, v gs = 0 v, t j = 125 c) (v ds = 28 v, v gs = 0 v) (v ds = 28 v, v gs = 0 v, t j = 125 c) i dss ? ? ? ? ? ? ? ? 0.5 1.0 50 80 a gate body leakage current (v gs = 3.0 v, v ds = 0 v) (v gs = 3.0 v, v ds = 0 v, t j = 125 c) (v gs = 5.0 v, v ds = 0 v) (v gs = 5.0 v, v ds = 0 v, t j = 125 c) i gss ? ? ? ? ? ? ? ? 60 80 90 110 a on characteristics gate threshold voltage (v gs = v ds , i d = 1.0 ma) (v gs = v ds , i d = 1.0 ma, t j = 125 c) v gs(th) 1.3 1.3 1.8 ? 2.0 2.0 v drain to source on ? resistance (i d = 150 ma, v gs = 3.0 v) (i d = 150 ma, v gs = 3.0 v, t j = 125 c) (i d = 150 ma, v gs = 5.0 v) (i d = 150 ma, v gs = 5.0 v, t j = 125 c) r ds(on) ? ? ? ? ? ? ? ? 1.4 1.7 0.8 1.1 output continuous current (v ds = 0.25 v, v gs = 3.0 v) (v ds = 0.25 v, v gs = 3.0 v, t j = 125 c) i ds(on) 150 140 200 ? ? ? ma forward transconductance (v ds = 12 v, i d = 150 ma) g fs ? 500 ? mmho dynamic characteristics input capacitance (v ds = 12 v, v gs = 0 v, f = 10 khz) ciss ? 32 ? pf output capacitance (v ds = 12 v, v gs = 0 v, f = 10 khz) coss ? 21 ? pf transfer capacitance (v ds = 12 v, v gs = 0 v, f = 10 khz) crss ? 8.0 ? pf switching characteristics propagation delay times: high to low propagation delay; figure 1, (v ds = 12 v, v gs = 3.0 v) low to high propagation delay; figure 1, (v ds = 12 v, v gs = 3.0 v) high to low propagation delay; figure 1, (v ds = 12 v, v gs = 5.0 v) low to high propagation delay; figure 1, (v ds = 12 v, v gs = 5.0 v) t phl t plh t phl t plh ? ? ? ? 890 912 324 1280 ? ? ? ? ns transition times: fall time; figure 1, (v ds = 12 v, v gs = 3.0 v) rise time; figure 1, (v ds = 12 v, v gs = 3.0 v) fall time; figure 1, (v ds = 12 v, v gs = 5.0 v) rise time; figure 1, (v ds = 12 v, v gs = 5.0 v) t f t r t f t r ? ? ? ? 2086 708 556 725 ? ? ? ? ns
nud3124, SZNUD3124 http://onsemi.com 5 typical performance curves (t j = 25 c unless otherwise noted) figure 1. switching waveforms load dump pulse not suppressed: v r = 13.5 v nominal 10% v s = 60 v nominal 10% t = 300 ms nominal 10% t r = 1 ? 10 ms 10% load dump pulse suppressed: note: max. voltage dut is exposed to is note: approximately 45 v. v s = 30 v 20% t = 150 ms 20% figure 2. maximum non ? repetitive surge power versus pulse width p w , pulse width (ms) 100 10 1 0 5 10 15 20 25 p pk , peak surge power (w) figure 3. load dump waveform definition vs t r 90% 10% t v r , i r 10% of peak; reference = v r , i r v out v in 0 v v oh v ih t r t f t plh t phl 50% 90% 50% 10% v ol
nud3124, SZNUD3124 http://onsemi.com 6 figure 4. load dump capability versus relay?s coil dc resistance relay?s coil ( ) 350 260 230 200 170 140 110 80 40 60 80 100 120 140 figure 5. drain ? to ? source leakage versus junction temperature figure 6. gate ? to ? source leakage versus junction temperature t j , junction temperature ( c) t j , junction temperature ( c) 75 50 25 0 ? 25 ? 50 0 2 4 6 8 10 14 100 50 25 0 ? 25 ? 50 20 30 40 50 60 70 80 figure 7. breakdown voltage versus junction temperature t j , junction temperature ( c) 125 50 0 ? 25 ? 50 33.6 33.8 34.0 34.4 34.6 34.8 v s , load dump (volts) 320 290 i dss , drain leakage ( a) 125 100 75 125 i gss gate leakage ( a) v gs = 5 v v gs = 3 v 25 100 75 34.2 33.4 bv dss breakdown voltage (v) i d = 10 ma figure 8. output characteristics v ds = 28 v figure 9. transfer function v ds , drain ? to ? source voltage (v) 0.7 0.5 0.4 0.3 0.2 0.0 1e ? 10 1e ? 08 1e ? 06 1e ? 04 0.01 1 0.1 0.6 0.8 i d drain current (a) v gs = 5 v v gs = 3 v 12 v gs = 2 v v gs = 2.5 v v gs = 1 v v gs , gate ? to ? source voltage (v) 4.5 3.0 2.5 2.0 1.5 0.5 1e ? 07 1e ? 05 1e ? 06 1e ? 04 0.1 1 1.0 4.0 5.0 i d drain current (a) 125 c 3.5 0.001 0.01 85 c 25 c ? 40 c v ds = 0.8 v
nud3124, SZNUD3124 http://onsemi.com 7 figure 10. on resistance variation versus junction temperature figure 11. on resistance variation versus gate ? to ? source voltage v gs , gate ? to ? source voltage (v) 2.2 1.8 1.6 1.4 1.2 1.0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 2.0 2.4 i d = 250 a 0.01 0.1 1.0 10 100 1000 10,000 100,000 1,000,000 d = 0.5 0.2 0.1 0.05 0.02 single pulse 0.01 p d(pk) t 1 t 2 duty cycle = t 1 /t 2 period pw r(t), transient thermal resistance (normalized) 1.0 0.1 0.01 0.001 t1, pulse width (ms) figure 12. zener clamp voltage versus zener current i z , zener current (ma) 10 1.0 0.1 32.0 32.5 33.0 33.5 34.0 34.5 35.0 100 1000 v z zener clamp voltage (v) figure 13. transient thermal response for nud3124lt1g t j , junction temperature ( c) 75 50 25 0 ? 25 ? 50 400 600 800 1000 1200 1400 1800 r ds(on) , drain ? to ? source resistance (m ) 125 100 i d = 0.25 a v gs = 3.0 v 1600 i d = 0.15 a v gs = 5.0 v i d = 0.15 a v gs = 3.0 v 0.14 0.16 0.18 0.20 r ds(on) , drain ? to ? source resistance ( ) 125 c 85 c 25 c ? 40 c 125 c 85 c 25 c ? 40 c 35.5 36.0
nud3124, SZNUD3124 http://onsemi.com 8 figure 14. applications diagram 12 v battery + ? micro processor signal for relay applications information relay, vibrator, or inductive load no nc nud3124 gate (1) 10 k 100 k drain (3) source (2)
nud3124, SZNUD3124 http://onsemi.com 9 package dimensions d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 21: pin 1. gate 2. source 3. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 sot ? 23 (to ? 236) case 318 ? 08 issue ap
nud3124, SZNUD3124 http://onsemi.com 10 package dimensions sc ? 74 case 318f ? 05 issue m 23 4 5 6 d 1 e b e a1 a 0.05 (0.002) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318f ? 01, ? 02, ? 03, ? 04 obsolete. new standard 318f ? 05. c l 0.7 0.028 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.95 0.037 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.90 1.00 1.10 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.25 0.37 0.50 0.010 c 0.10 0.18 0.26 0.004 d 2.90 3.00 3.10 0.114 e 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 0.20 0.40 0.60 0.008 0.039 0.043 0.002 0.004 0.015 0.020 0.007 0.010 0.118 0.122 0.059 0.067 0.037 0.041 0.016 0.024 nom max 2.50 2.75 3.00 0.099 0.108 0.118 h e ? ? l 0 10 0 10 style 7: pin 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nud3124/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
